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BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS

Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C 50 W at 25C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING BDT61 Collector-base voltage (IE = 0) BDT61A BDT61B BDT61C BDT61 Collector-emitter voltage (IB = 0) BDT61A BDT61B BDT61C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 1) Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.4 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 60 80 100 120 60 80 100 120 5 4 0.1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W C C C V V UNIT
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDT61 V(BR)CEO IC = 30 mA IB = 0 (see Note 3) BDT61A BDT61B BDT61C VCE = 30 V ICEO Collector-emitter cut-off current VCE = 40 V VCE = 50 V VCE = 60 V VCB = 60 V VCB = 80 V VCB = 100 V ICBO Collector cut-off current VCB = 120 V VCB = 30 V VCB = 40 V VCB = 50 V VCB = 60 V IEBO hFE VCE(sat) VBE(on) VEC Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VEB = VCE = IB = VCE = IE = 5V 3V 6 mA 3V 1.5 A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 1.5 A IC = 1.5 A IC = 1.5 A IB = 0 (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 750 2.5 2.5 2 V V V TC = 150C TC = 150C TC = 150C TC = 150C BDT61 BDT61A BDT61B BDT61C BDT61 BDT61A BDT61B BDT61C BDT61 BDT61A BDT61B BDT61C MIN 60 80 100 120 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2.0 2.0 2.0 2.0 5 mA mA mA V TYP MAX UNIT
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.5 62.5 UNIT C/W C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER ton toff
TEST CONDITIONS IC = 2 A VBE(off) = -5 V IB(on) = 8 mA RL = 20
MIN IB(off) = -8 mA tp = 20 s, dc 2%
TYP 1 4.5
MAX
UNIT s s
Turn-on time Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 20000 10000 hFE - Typical DC Current Gain
TCS110AD
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 1*5
TCS110AB
TC = -40C TC = 25C TC = 100C
1*0
1000
0*5 TC = -40C TC = 25C TC = 100C 0 0*5 1*0 IC - Collector Current - A 5*0
VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 5*0
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C
TCS110AC
2*5
2*0
1*5
1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 5*0
Figure 3.
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
10
SAS110AB
IC - Collector Current - A
1*0
0*1
BDT61 BDT61A BDT61B BDT61C 0.01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
60 Ptot - Maximum Power Dissipation - W
TIS110AA
50
40
30
20
10
0 0 25 50 75 100 125 150 TC - Case Temperature - C
Figure 5.
4
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5

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